Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

iii List of publications v Notations and abbreviations vii

A Genetic-Neural-Network Modeling Approach for Self-Heating in GaN High Electron Mobility Transistors

Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Quantum Confinement in High Electron Mobility Transistors

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...